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Effect of SiO2 thickness on dielectric breakdown defect density due to surface crystal-originated particlesYAMABE, Kikuo; SHIMADA, Yasuhiro; MIN PIAO et al.Journal of the Electrochemical Society. 2003, Vol 150, Num 3, pp F42-F46, issn 0013-4651Article

Breakdown and generation of interface states in oxynitride thin films on siliconNOVKOVSKI, N.Semiconductor science and technology. 2002, Vol 17, Num 2, pp 93-96, issn 0268-1242Article

On the nature of the origin of the isothermal and non-isothermal current released from dielectric materialsNEAGU, Eugen R; NEAGU, Rodica M.Thin solid films. 2001, Vol 384, Num 1, pp 15-22, issn 0040-6090Article

CONTRIBUTION À L'ÉTUDE DES PHÉNOMÈNES DE PRÉCLAQUAGE DANS LES DIÉLECTRIQUES LIQUIDES-MODÈLES DE GÉNÉRATION ET DE PROPAGATION DES STREAMERS = CONTRIBUTION TO THE STUDY OF PRE-BREAKDOWN IN DIELECTRIC LIQUIDS-STREAMERS INITIATION AND PROPAGATION MODELSAka, N'Gnui Thomas; Beroual, Abderrahmane.2000, 118 p.Thesis

Etude d'isolants soumis à des champs divergents par une mesure directe des distributions de charges injectées = Study of charge injection and transport in insulators submitted to strongly diverging fields by direct determination of space charge distributionsNaz Paris, Olivia; Lewiner, Jacques.2000, 158 p.Thesis

Improvemnt of silicon dioxide integrity against hole-related breakdown with the incorporation of foreign atoms : Molecular orbital examinationMARUIZUMI, T; USHIO, J; TAKEMURA, Y et al.International conference on conduction and breakdown in solid dielectrics. 1998, pp 257-260, isbn 0-7803-4237-2Conference Paper

Dielectric breakdown in F-doped SiO2 films formed by plasma-enhanced chemical vapor depositonKATO, H; SAKAI, S; TAKAMI, A et al.International conference on conduction and breakdown in solid dielectrics. 1998, pp 368-371, isbn 0-7803-4237-2Conference Paper

Space charge characterization of MgO by coupling cavity resonator and mirror methodDAMAK, N; KALLEL, A; FAKHFAKH, Z et al.Annales de chimie (Paris. 1914). 1998, Vol 23, Num 1-2, pp 255-258, issn 0151-9107Conference Paper

Some physical aspects of the electrical breakdown of solid dielectricsSIGMOND, R. S; HEGERBERG, R.Le Vide (1995). 1998, Vol 53, Num 287, pp 294-301, issn 1266-0167, SUPConference Paper

Contact phenomena in poorly conducting liquid mediaRYCHKOV, Yu. M.Journal of engineering physics and thermophysics. 1997, Vol 70, Num 6, pp 970-976, issn 1062-0125Article

The mechanism of the increase in the dielectric strength of n-hexane in micron gapsKLIMKIN, V. F; ANDERSON, J. R. X.Technical physics. 1993, Vol 38, Num 5, pp 431-433, issn 1063-7842Article

Study of electric dipole and space charge characteristics of Al/C12TCNQ/Al by means of thermally stimulated current measurementsKUSHIDA, Masahito; HARUBAYASHI, Katsuaki; HARADA, Kieko et al.Thin solid films. 2003, Vol 423, Num 2, pp 224-227, issn 0040-6090, 4 p.Article

Post-breakdown electrical characterization of ultrathin SiO2films with conductive atomic force microscopyPORTI, M; NAFRIA, M; AYMERICH, X et al.Nanotechnology (Bristol. Print). 2002, Vol 13, Num 3, pp 388-391, issn 0957-4484, 4 p.Conference Paper

Time-resolved study of laser-induced breakdown in dielectricsQUERE, F; GUIZARD, S; MARTIN, Ph et al.Europhysics letters (Print). 2001, Vol 56, Num 1, pp 138-144, issn 0295-5075Article

Three-dimensional space-charge measurement in a dielectric using the acoustic lens and PWP methodXIAOKUI QIN; SUZUKI, K; TANAKA, Y et al.Journal of physics. D, Applied physics (Print). 1999, Vol 32, Num 2, pp 157-160, issn 0022-3727Article

Comportement d'alumines face à l'injection de charges. Relation microstructure - claquage diélectrique - mesure des charges d'influence (méthode SEMM) = Behaviour of alumina materials during injection of charges. Relation between microstructure, dielectric breakdown and image current measurement (the SEMM method)Liebault, Jacqueline; Goeuriot, Dominique.1999, 244 p.Thesis

Relationship between surface discharge of polboschel-type in an artificial void and pit formationIMAI, Kuniharu.CEIDP conference on electrical insulation and dielectric phenomena. 1998, pp 237-240, isbn 0-7803-8584-5, 1Vol, 4 p.Conference Paper

Ageing and breakdown in solids or at dielectric interfaces. Typical features and relation with insulator charging propertiesLE GRESSUS, C.Le Vide (1995). 1998, Vol 53, Num 287, pp 733-739, issn 1266-0167, SUPConference Paper

ETUDE DES PHENOMENES HYDRODYNAMIQUES ENGENDRES DANS LES LIQUIDES DIELECTRIQUES PAR UN CHAMP ELECTRIQUE TRES INTENSE = STUDY OF HYDRODYNAMIC PHENOMENA GENERATED IN DIELECTRIC LIQUIDS UNDER A HIGH DIVERGENT ELECTRIC FIELDJomni, Fathi; Denat, André.1997, 189 p.Thesis

Stochastic modelling and characterisation of electrical treesSARATHI, R.Solid state communications. 1996, Vol 97, Num 7, pp 617-621, issn 0038-1098Article

Mesures de charges d'espace dans les oxydes diélectriques par la méthode de l'Onde Thermique = Space charge measurements in dielectric oxydes by the Thermal Step techniqueAgnel, Serge; Toureille, A.1996, 167 p.Thesis

Investigation of the kinetics of electrical breakdown of tantalum oxide layersLALEKO, V. A; DRAGAN, I. I; ERSHOVA, N. YU et al.Physica status solidi. A. Applied research. 1994, Vol 141, Num 1, pp K11-K14, issn 0031-8965Article

Study of the radiation charging of dielectrics by ionsDERGOBUZOV, K. A; YALOVETS, A. P.Journal of applied mechanics and technical physics. 1994, Vol 35, Num 2, pp 169-174, issn 0021-8944Article

Physical model for breakdown structures in solid dielectricsDISSADO, L. A; SWEENEY, P. J. J.Physical review. B, Condensed matter. 1993, Vol 48, Num 22, pp 16261-16268, issn 0163-1829Article

Quality and reliability of wet and dry oxides on n-type 4H-SiCANTHONY, C. J; JONES, A. J; UREN, M. J et al.Materials science & engineering. B, Solid-state materials for advanced technology. 1999, Vol 61-62, pp 460-463, issn 0921-5107Conference Paper

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